The CGHV14800 GaN HEMT features high efficiency, high gain and wide bandwidth capabilities, which suits it for L-Band radar amplifier applications.
GaN-on-SiC high electron mobility transistors (HEMTs) maker Wolfspeed will release the highest power 50V GaN HEMT demonstrated to date—its 900W CGHV14800 GaN HEMT for L-Band radar applications.
Delivering a minimum of 800W of pulsed power at 1.2 – 1.4GHz and 50V operation with better than 65% drain efficiency, the CGHV14800 features high efficiency, high gain and wide bandwidth capabilities, which suits it for L-Band radar amplifier applications, including: air traffic control (ATC) radar, penetration radar, antimissile system radar, target-tracking radar, and long-range surveillance radar.
Internally matched on input and output, the 900W, 50V GaN HEMT also exhibits 14dB power gain and <0.3dB pulsed amplitude droop. Wolfspeed’s CGHV14800 is supplied in a ceramic/metal flange package that can be shipped individually, or alongside or installed on a test board.
Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices claim higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. In addition to L-Band radar power amplifiers, Wolfspeed said its GaN-on-SiC RF devices are also enabling next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.