The 1.2kV SiC MOSFETs have lower failure in time rate and short-circuit capability that can be adapted to different applications.
Infineon Technologies AG has announced that it is starting volume production for the Easy 1B, which the company claims as the first full-Silicon Carbide (SiC) module. The company has also released additional module platforms and topologies for the 1.2kV CoolSiC MOSFET family.
"Silicon carbide has reached a tipping point: Taking cost-benefit analysis into account, it is ready for use in a variety of applications," said Dr. Peter Wawer, Division President Industrial Power Control, Infineon, in a press release.
Transistors that are based on SiC offer higher efficiency, increased power density, small footprints, and reduced system costs. According to Infineon, the new 1.2kV SiC MOSFETs have been optimised to combine high reliability with performance. They show dynamic losses that are an order of magnitude lower than 1.2kV silicon (Si) IGBTs.
The first products will initially support upcoming system challenges in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) and charging/storage systems. The new configurations will also enable revolutionary new solutions in industrial drives, medical technology or auxiliary power supplies in the railway sector in the near future.
Infineon noted that one major advantage of the trench technology with the 1.2kV SiC MOSEFT lies in an extended robustness. This is due to the lower failure in time (FIT) rate and the short-circuit capability, which can be adapted to the respective application. A threshold voltage (V th) of 4 V and the recommended switch-on threshold (V GS) of +15 V allows the transistors to be controlled like an IGBT and safely be switched off in the event of a fault. The SiC MOSFETs enable very fast switching transients. Additionally, Infineon said that their technology offers an easy adjustability of the transients via gate series resistors. The EMC behaviour can thus be easily optimised.
Last year, Infineon announced the products Easy 1B (Half-Bridge / Booster) as well as the discrete TO-247-3pin and -4pin solutions. This year, Infineon has released the following SiC modules:
- Easy 1B with B6 (Six-Pack) topology. The module is characterised by Infineon's module configuration with an on-resistance (R DS(ON)) of only 45 mΩ. An integrated body diode ensures a low-loss freewheeling function. The Easy 1B is suitable for applications in the fields of drives, solar or welding technology.
- Easy 2B with Half-Bridge topology. This larger Easy device offers an enhanced performance with an R DS(ON) of 8 mΩ per switch. The low-inductance module concept is ideal for applications with more than 50 kW and fast switching operations. These include solar inverters, quick-charging systems, or solutions for uninterruptible power supplies.
- 62 mm with Half-Bridge topology. This is an additional Half-Bridge configuration featuring even higher power with an R DS(ON) of 6 mΩ per switching function. This module platform offers the possibility of low-inductance connection of systems in the medium power range. A variety of applications make use of this, including medical technology or auxiliary power supplies in the railway sector, to name a few.
Easy 1B and the two discrete devices TO-247-3pin and -4pin are gradually entering volume production this year. The Half-Bridge configuration for the Easy 1B is now available. The new product configurations are available as samples and the serial start is planned for 2018.