This paper discusses about robustness evaluation of SiC MOSFETs under avalanche working conditions. Capability to sustain previous operating conditions, is required especially for power converters applied for electric traction. Indeed, possible failure of devices during freewheeling conduction or wrong gate driver command signals can involve converter power devices in avalanche. Therefore, experimental tests have been […]
As conventional silicon-based MOSFETs mature, they are now reaching their theoretical limits of performance. Wide band-gap semiconductor devices represent an interesting alternative for improving performance due to their electrical, thermal, and mechanical properties. The admin of this site has disabled the download button for this page.
The energy efficiency of industrial drives is a key factor since electric motors account for most of the electric energy consumed by industry. Therefore, a large amount of effort is required by semiconductor manufacturers to enhance the performance of power devices used in the converter stages. ST’s latest SiC MOSFET technology is setting new performance […]