Rad hard GaN transistors from EPC targeted at demanding space applications
EPC's EPC7004 rad-hard GaN FET devices are suitable for space applications and other high-reliability environments.
EPC launches smallest 40V, 1.1mΩ GaN FET for space-constrained applications
EPC has expanded its selection of low-voltage, off-the-shelf GaN transistors with the introduction of the EPC2066 GaN FET.
Sensitron and EPC collaborate on high-power density 350V GaN half-bridge IPM
Using EPC's EPC2050 GaN FET, Sensitron was able to reduce the size of its solution by 60% while also further…
EPC rad-hard transistor targeted at demanding space applications
EPC has expanded its family of radiation-hardened gallium nitride products with the release of the EPC7007 GaN FET.
EPC launches new AEC-qualified lidar integrated circuit
The EPC2221 is the latest addition to EPC's growing family of GaN transistors and ICs designed for demanding automotive applications.
EPC GaN FETs enable premium performance at low cost for e-bikes, drones, robotics
EPC's EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost.
EPC releases Phase-14 Reliability Report
The Phase-14 reliability report presents the results of testing eGaN devices to the point of failure, providing the information to…
EPC reference design board powered by ePower chipset
The EPC9170 is a 2kW, two-phase 48V–14V bidirectional converter that operates with 96.8% peak efficiency in a small footprint.