Rad hard GaN transistors from EPC targeted at demanding space applications
EPC's EPC7004 rad-hard GaN FET devices are suitable for space applications and other high-reliability environments.
A GaN recap for next-gen RF applications
The GaN devices have been making steady inroads into many RF, microwave, millimeter-wave, and even terahertz-wave (THz) applications.
Transphorm GaN FETs enable high reliability medical applications
Transphorm's GaN technology is powering Nayuta Power Energy's LEMURIA ME3000 lithium-ion battery power storage device for medical equipment.
EPC launches smallest 40V, 1.1mΩ GaN FET for space-constrained applications
EPC has expanded its selection of low-voltage, off-the-shelf GaN transistors with the introduction of the EPC2066 GaN FET.
EPC to showcase GaN technology revolution at APEC 2022
At APEC, EPC will showcase and discuss how GaN technology is transforming the delivery of power across many industries, including…
GaN Systems triples its operations in Asia
GaN Systems is expanding its presence in Asia with a 3X increase in its operations in Taiwan.
EPC GaN FETs enable premium performance at low cost for e-bikes, drones, robotics
EPC's EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost.
EPC releases Phase-14 Reliability Report
The Phase-14 reliability report presents the results of testing eGaN devices to the point of failure, providing the information to…
ST intros first PowerGaN products for slimmer power supplies
STMicroelectronics's new family of GaN power semiconductors can significantly reduce energy use and enable slimmer power supply designs.
What makes SiC and GaN suitable for high-power designs
There are several characteristics when analyzing silicon, silicon carbide (SiC), and gallium nitride (GaN) capabilities for a power system.