TI wins four awards at EE Awards Asia and accelerates the momentum of GaN technology
Texas Instruments has won four awards at this year’s EE Awards Asia for its LMG3525R030-Q1 gallium nitride (GaN) device.
A short tutorial on power system designs in cloud computing
The cloud power encompassing POLs, multi-phase controllers, and smart power stages must be meticulously designed to optimize efficiency and reliability…
STMicroelectronics STPOWER MOSFETs minimize switching power losses
STMicroelectronics' new super-junction STPOWER MDmesh K6 series enhances several key parameters to minimize system-power losses.
EPC eGaN FETs enhance drive performance of low-cost motors
The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and eliminates the electrolytic capacitors for…
A comparison between mirrors and Hall-effect current sensing
Advances in IC technology have led to the Hall-effect sensors and current mirror methods for board-level current measurement.
EPC expands transistor lineup with 40V eGaN FET
EPC's EPC2067 eGaN FET offers designers a smaller, more efficient, and more reliable device for high-performance, space-constrained applications.
Thermal management: A close look at vertical heat flow in PCBs
Here is a detailed treatment of the impact of the thermal heat flow on other components underneath a heated trace…
Infineon technology powers Sungrow’s PV string inverter solution
Sungrow's inverter integrates Infineon's customized EasyPACK power modules equipped with the newly released CoolSiC MOSFETs.
Microchip Vref IC provides low drift for extended-temperature automotive applications
The new device completes Microchip's family of Vref products providing increased reliability and AEC-Q100 qualification.
Is a concrete rechargeable battery in your future?
There's more to a good rechargeable battery than energy density by volume and weight.