2023-04-11 - STMicroelectronics
STMicroelectronics STripFET devices improve FoM by 40%
STMicroelectronics' latest N-channel power MOSFETs combine extremely low gate-drain charge and on-resistance, giving 40% better figure of merit than comparable…
2023-03-31 - STMicroelectronics
ST’s industrial-grade MOSFETs improve FoM by 40%
The 100V power MOSFETs combine low gate-drain charge and on-resistance, giving 40% better figure of merit than comparable devices of…