Toshiba SiC MOSFET modules to enable smaller, more-efficient industrial equipment
Article By : Toshiba Electronic Devices & Storage Corp.
The first Toshiba products with these voltage ratings, the SiC MOSFETs join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.
Toshiba Electronic Devices & Storage Corp. has launched two silicon carbide (SiC) MOSFET Dual Modules—the MG600Q2YMS3 with a voltage rating of 1200V and drain current rating of 600A, and the MG400V2YMS3 with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.
The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.
The devices are suitable for application in inverters and converters for railway vehicles, renewable energy power generation systems, motor control equipment, and high-frequency DC-DC converters.
